Open AccessImprovement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation
Author(s) -
Kai-Chieh Chuang,
JennGwo Hwu
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2402215
Subject(s) - silc , materials science , dielectric , capacitance , oxide , leakage (economics) , gate dielectric , dielectric strength , substrate (aquarium) , gate oxide , optoelectronics , electronic engineering , voltage , electrical engineering , electrode , chemistry , metallurgy , transistor , oceanography , geology , economics , macroeconomics , engineering
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