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Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
Author(s) -
Chun-Yu Peng,
Feng Yuan,
C.-Y. Yu,
P.-S. Kuo,
M. H. Lee,
S. Maikap,
ChiaHung Hsu,
C. W. Liu
Publication year - 2007
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2400394
Subject(s) - electron mobility , materials science , channel (broadcasting) , quantum well , silicon , strain (injury) , charge carrier density , condensed matter physics , optoelectronics , nanotechnology , physics , doping , electrical engineering , optics , medicine , laser , engineering

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