Room-temperature single charge sensitivity in carbon nanotube field-effect transistors | Zendy

Haibing Peng | Zendy; Marguerite Hughes | Zendy; J. A. Golovchenko | Zendy

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Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

Author(s) -

Haibing Peng,

Marguerite Hughes,

J. A. Golovchenko

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2399942

Subject(s) - carbon nanotube , carbon nanotube field effect transistor , coaxial , materials science , field effect transistor , transistor , carbon nanotube quantum dot , optoelectronics , nanotube , thermal conduction , current (fluid) , electron , nanotechnology , voltage , electrical engineering , physics , engineering , quantum mechanics , composite material

Electrical current fluctuation studies are reported for coaxial p-type and n-type single-wall carbon nanotube field-effect transistors (FETs). Abrupt discrete switching of the source-drain current is observed at room temperature. The authors attribute these random telegraph signals to charge fluctuating electron traps near the FET conduction channels. Evolution of the current-switching behavior associated with the occupancy of individual electron traps is demonstrated and analyzed statistically. The result strongly indicates room temperature single charge sensitivity in carbon nanotube FETs, which may offer potential applications for single molecule sensors based on suitably prepared FET devices.

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