Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires | Zendy

Seho Lee | Zendy; DongKyun Ko | Zendy; Yeonwoong Jung | Zendy; Ritesh Agarwal | Zendy

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Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires

Author(s) -

Seho Lee,

DongKyun Ko,

Yeonwoong Jung,

Ritesh Agarwal

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2397558

Subject(s) - nanowire , phase change memory , materials science , nanoscopic scale , non volatile memory , phase transition , optoelectronics , scalability , condensed matter physics , nanotechnology , physics , computer science , layer (electronics) , database

Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42mA for a 28nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.

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