Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure | Zendy

Cheng-Yen Chen | Zendy; Dong-Ming Yeh | Zendy; Yen-Cheng Lu | Zendy; C. C. Yang | Zendy

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Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure

Author(s) -

Cheng-Yen Chen,

Dong-Ming Yeh,

Yen-Cheng Lu,

C. C. Yang

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2390639

Subject(s) - photoluminescence , quantum well , materials science , surface plasmon , metal , relaxation (psychology) , plasmon , coupling (piping) , semiconductor , optoelectronics , condensed matter physics , wide bandgap semiconductor , optics , physics , composite material , laser , metallurgy , psychology , social psychology

The authors demonstrate the metallic-structure dependent surface plasmon (SP) coupling behaviors with a blue-emitting InGaN∕GaN quantum well (QW), which is 10nm away from the metallic structures. The SP-QW coupling behaviors in the areas of semiconductor surface coated with silver thin film and silver nanoparticles are compared. It is found that both the suppression of photoluminescence (PL) intensity and the reduction of time-resolved PL (TRPL) decay time strongly depend on the metallic morphology. A phenomenological model of carrier relaxation in the SP-QW coupling process is built to fit the TRPL decay profiles for calibrating the reasonable decay time constants of carrier and SP.

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