Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers | Zendy

N. F. Massé | Zendy; Stephen J. Sweeney | Zendy; I. P. Marko | Zendy; A.R. Adams | Zendy; Nobuaki Hatori | Zendy; Mitsuru Sugawara | Zendy

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Temperature dependence of the gain in p-doped and intrinsic 1.3μm InAs∕GaAs quantum dot lasers

Author(s) -

N. F. Massé,

Stephen J. Sweeney,

I. P. Marko,

A.R. Adams,

Nobuaki Hatori,

Mitsuru Sugawara

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2387114

Subject(s) - lasing threshold , doping , quantum dot , quantum dot laser , materials science , optoelectronics , laser , quantum well , condensed matter physics , charge carrier density , semiconductor laser theory , physics , optics , semiconductor , wavelength

The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at 350 K. Our results show that, although one would theoretically expect a higher gain for a fixed carrier density in p-doped devices, due to the wider nonthermal distribution of carriers amongst the dots at T=293 K, the peak net gain of the p-doped lasers is actually less at low injection than that of the undoped devices. However, at higher current densities, p doping reduces the effect of gain saturation and therefore allows ground-state lasing in shorter cavities and at higher temperatures.

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