Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans | Zendy

J. A. Sharp | Zendy; N. E. B. Cowern | Zendy; R.P. Webb | Zendy; K.J. Kirkby | Zendy; D. Giubertoni | Zendy; S. Gennaro | Zendy; M. Bersani | Zendy; M.A. Foad | Zendy; F. Cristiano | Zendy; PierFrancesco Fazzini | Zendy

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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Author(s) -

J. A. Sharp,

N. E. B. Cowern,

R.P. Webb,

K.J. Kirkby,

D. Giubertoni,

S. Gennaro,

M. Bersani,

M.A. Foad,

F. Cristiano,

PierFrancesco Fazzini

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2385215

Subject(s) - boron , silicon , annealing (glass) , materials science , laser , analytical chemistry (journal) , optoelectronics , chemistry , optics , metallurgy , physics , organic chemistry , chromatography

Electrical activation and redistribution of 500eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150°C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150°C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.

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