Origin of efficient luminescence from GaN:Eu3+ epitaxial films revealed by microscopic photoluminescence imaging spectroscopy | Zendy

Atsushi Ishizumi | Zendy; Junji Sawahata | Zendy; Katsuhiro Akimoto | Zendy; Yoshihiko Kanemitsu | Zendy

Open Access

Origin of efficient luminescence from GaN:Eu3+ epitaxial films revealed by microscopic photoluminescence imaging spectroscopy

Author(s) -

Atsushi Ishizumi,

Junji Sawahata,

Katsuhiro Akimoto,

Yoshihiko Kanemitsu

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2385180

Subject(s) - photoluminescence , luminescence , epitaxy , materials science , spectroscopy , photoluminescence excitation , optoelectronics , doping , crystallographic defect , analytical chemistry (journal) , chemistry , crystallography , nanotechnology , physics , layer (electronics) , quantum mechanics , chromatography

We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films by microscopic PL imaging spectroscopy. The GaN:Eu3+ epitaxial films exhibit efficient red luminescence related to intra-4f transitions of Eu3+ ions. The intensity and the spectral shape of the Eu3+-related PL are sensitive to the Eu3+ concentration, the excitation wavelength, and the monitored position. Microscopic PL imaging spectroscopy revealed that efficient red luminescence of GaN:Eu3+ epitaxial films is due to Eu3+ ions around point defects and dislocations

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research