Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires | Zendy

Lyubov V. Titova | Zendy; Thang B. Hoang | Zendy; Howard E. Jackson | Zendy; Leigh M. Smith | Zendy; J.M. Yarrison-Rice | Zendy; Y. Kim | Zendy; Hannah J. Joyce | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires

Author(s) -

Lyubov V. Titova,

Thang B. Hoang,

Howard E. Jackson,

Leigh M. Smith,

J.M. Yarrison-Rice,

Y. Kim,

Hannah J. Joyce,

Hark Hoe Tan,

C. Jagadish

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2364885

Subject(s) - nanowire , materials science , photoluminescence , condensed matter physics , core (optical fiber) , dielectric , optoelectronics , band gap , gallium arsenide , shell (structure) , physics , composite material

Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. © 2006 American Institute of Physics

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