The influence of phonons on the optical properties of GaN | Zendy

D. Y. Song | Zendy; Madivala G. Basavaraj | Zendy; S. A. Nikishin | Zendy; M. Holtz | Zendy; V. Soukhoveev | Zendy; A. S. Usikov | Zendy; V. Dmitriev | Zendy

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The influence of phonons on the optical properties of GaN

Author(s) -

D. Y. Song,

Madivala G. Basavaraj,

S. A. Nikishin,

M. Holtz,

V. Soukhoveev,

A. S. Usikov,

V. Dmitriev

Publication year - 2006

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2361159

Subject(s) - phonon , exciton , condensed matter physics , laser linewidth , photoluminescence , raman spectroscopy , wide bandgap semiconductor , band gap , physics , materials science , optoelectronics , optics , laser

We comprehensively examine the importance of phonons on the optical properties of GaN. Using Raman and photoluminescence (PL) spectroscopies, the energies and linewidths of optic phonons, excitons, and discrete phonon sidebands (PSBs) are studied between 20 and 325 K. The temperature dependence of the A1 (LO) phonon energy and linewidth are described by a combined two- and three-phonon decay process. The narrow E22 phonon decays by the three-phonon emission process. Three band-edge excitons are observed in PL with linewidths between 2.8 and 5.3 meV at temperature 22 K. The energy gap shrinkage and exciton linewidths are completely interpreted based on electron-phonon interactions. The shift, broadening, and asymmetry of the PSBs are explained by incorporating the decay mechanism of A1 (LO) phonon and the exciton broadening from electron-phonon interactions.

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