Open AccessElectrically detected magnetic resonance in ion-implanted Si:P nanostructures
Author(s) -
Dane R. McCamey,
Hans Huebl,
Martin S. Brandt,
W. D. Hutchison,
Jeffrey C. McCallum,
Robert G. Clark,
A. R. Hamilton
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2358928
Subject(s) - ion implantation , silicon , materials science , spins , electron paramagnetic resonance , ion , optoelectronics , nanostructure , semiconductor , resonance (particle physics) , nuclear magnetic resonance , nanotechnology , chemistry , atomic physics , condensed matter physics , physics , organic chemistry
We present the results of electrically-detected magnetic resonance (EDMR)experiments on silicon with ion-implanted phosphorus nanostructures, performedat 5 K. The devices consist of high-dose implanted metallic leads with a squaregap, into which Phosphorus is implanted at a non-metallic dose corresponding to10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region,the EDMR signal from less than 100 donors is detected. This technique providesa pathway to the study of single donor spins in semiconductors, which isrelevant to a number of proposals for quantum information processing.Comment: 9 pages, 3 figure
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