Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs | Zendy

Zetian Mi | Zendy; P. Bhattacharya | Zendy; Jianfeng Yang | Zendy

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Growth and characteristics of ultralow threshold 1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs

Author(s) -

Zetian Mi,

P. Bhattacharya,

Jianfeng Yang

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2358847

Subject(s) - quantum dot , molecular beam epitaxy , photoluminescence , quantum dot laser , optoelectronics , gallium arsenide , materials science , laser , epitaxy , quantum well , chirp , semiconductor laser theory , condensed matter physics , optics , physics , nanotechnology , semiconductor , layer (electronics)

The molecular beam epitaxial growth and characteristics of 1.45 μm1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼ 30 meV∼30meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63 A/cm2)(63A∕cm2), large frequency response (f−3 dB = 8 GHz)(f−3dB=8GHz), and near-zero αα parameter and chirp

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