Doping effect on dark currents in In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition | Zendy

Krystyna DrozdowiczTomsia | Zendy; Ewa M. Goldys | Zendy; Lan Fu | Zendy; C. Jagadish | Zendy

Open Access

Doping effect on dark currents in In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Author(s) -

Krystyna DrozdowiczTomsia,

Ewa M. Goldys,

Lan Fu,

C. Jagadish

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2354432

Subject(s) - chemical vapor deposition , quantum dot , photodetector , dark current , materials science , doping , silicon , dopant , optoelectronics , infrared , quantum tunnelling , deposition (geology) , analytical chemistry (journal) , chemistry , optics , physics , paleontology , sediment , biology , chromatography

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device

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