Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon | Zendy

Ruth E. Harding | Zendy; Glyn Rees Davies | Zendy; J. Tan | Zendy; P. G. Coleman | Zendy; C. P. Burrows | Zendy; J. WongLeung | Zendy

Open Access

Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

Author(s) -

Ruth E. Harding,

Glyn Rees Davies,

J. Tan,

P. G. Coleman,

C. P. Burrows,

J. WongLeung

Publication year - 2006

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2354332

Subject(s) - photoluminescence , vacancy defect , materials science , annihilation , positron annihilation spectroscopy , annealing (glass) , silicon , ion implantation , impurity , positron annihilation , molecular physics , ion , positron , condensed matter physics , optoelectronics , chemistry , physics , electron , nuclear physics , metallurgy , organic chemistry

This work was supported by EPSRC Grant No. GR/R 10820/01 and by the EU Coordination Action program CADRES. One of the authors J.W.L. thanks the Australian Research Council for a fellowship.

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