Rigorous carrier dynamic model of electroluminescent metal-oxide-semiconductor silicon tunneling diodes
Author(s) -
Eih-Zhe Liang,
TingWei Su,
ChingFuh Lin
Publication year - 2006
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2345048
Subject(s) - electroluminescence , quantum tunnelling , diode , silicon , materials science , optoelectronics , spontaneous emission , current density , light emitting diode , semiconductor , carrier lifetime , oxide , condensed matter physics , physics , optics , nanotechnology , laser , layer (electronics) , quantum mechanics , metallurgy
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