Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes | Zendy

A. Krier | Zendy; Michael R. Stone | Zendy; Qiandong Zhuang | Zendy; Po-Wei Liu | Zendy; G. Tsai | Zendy; HoHsiung Lin | Zendy

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Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes

Author(s) -

A. Krier,

Michael R. Stone,

Qiandong Zhuang,

Po-Wei Liu,

G. Tsai,

HoHsiung Lin

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2339036

Subject(s) - electroluminescence , optoelectronics , diode , light emitting diode , materials science , infrared , epitaxy , quantum well , optics , physics , nanotechnology , laser , layer (electronics)

Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output

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