Output properties of C60 field-effect transistor device with Eu source/drain electrodes | Zendy

Kenji Ochi | Zendy; Takayuki Nagano | Zendy; Toshio Ohta | Zendy; Ryo Nouchi | Zendy; Yoshihiro Kubozono | Zendy; Yukitaka Matsuoka | Zendy; Eiji Shikoh | Zendy; Akihiko Fujiwara | Zendy

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Output properties of C60 field-effect transistor device with Eu source/drain electrodes

Author(s) -

Kenji Ochi,

Takayuki Nagano,

Toshio Ohta,

Ryo Nouchi,

Yoshihiro Kubozono,

Yukitaka Matsuoka,

Eiji Shikoh,

Akihiko Fujiwara

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2337990

Subject(s) - electrode , field effect transistor , materials science , optoelectronics , work function , transistor , electron mobility , induced high electron mobility transistor , field effect , condensed matter physics , nanotechnology , electrical engineering , chemistry , voltage , physics , layer (electronics) , engineering

Field-effect transistor (FET) device with thin films of C_<60> has been fabricated with Eu electrodes exhibiting small work function. The C_<60> FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm^2 V^<-1> s^<-1>. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C_<60>

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