Open AccessSharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers
Author(s) -
Lyudmila Turyanska,
A. Baumgärtner,
A. Chaggar,
A. Patanè,
L. Eaves,
M. Henini
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2337540
Subject(s) - electroluminescence , quantum dot , quantum tunnelling , excited state , optoelectronics , materials science , diode , relaxation (psychology) , doping , charge carrier , carrier lifetime , condensed matter physics , layer (electronics) , physics , nanotechnology , atomic physics , silicon , social psychology , psychology
We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection and light emission from a small number of individual dots within a large ensemble. We also show that the extent of carrier energy relaxation prior to recombination can be controlled by tailoring the morphology of the QD layer. © 2006 American Institute of Physics
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