Magnetoresistance in thin Permalloy film (10nm thick and 30–200nm wide) nanocontacts fabricated by e-beam lithography | Zendy

N. Garcı́a | Zendy; Hao Cheng | Zendy; Yonghua Lü | Zendy; M. Muñoz | Zendy; Yifang Chen | Zendy; Zheng Cui | Zendy; Zhengqi Lu | Zendy; Yun Zhou | Zendy; Genhua Pan | Zendy; André A. Pasa | Zendy

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Magnetoresistance in thin Permalloy film (10nm thick and 30–200nm wide) nanocontacts fabricated by e-beam lithography

Author(s) -

N. Garcı́a,

Hao Cheng,

Yonghua Lü,

M. Muñoz,

Yifang Chen,

Zheng Cui,

Zhengqi Lu,

Yun Zhou,

Genhua Pan,

André A. Pasa

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2337538

Subject(s) - permalloy , magnetoresistance , materials science , thin film , lithography , electron beam lithography , optoelectronics , deposition (geology) , nanotechnology , composite material , resist , layer (electronics) , magnetic field , magnetization , paleontology , physics , quantum mechanics , sediment , biology

In this paper we show spin dependent transport experiments innanoconstrictions ranging from 30 to 200nm. These nanoconstrictions werefabricated combining electron beam lithography and thin film depositiontechniques. Two types of geometries have been fabricated and investigated. Wecompare the experimental results with the theoretical estimation of theelectrical resistance. Finally we show that the magnetoresistance for thedifferent geometries does not scale with the resistance of the structure andobtain drops in voltage of 20mV at 20Oe.

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