Fluorine-vacancy complexes in ultrashallow B-implanted Si | Zendy

D. A. Abdulmalik | Zendy; P. G. Coleman | Zendy; N. E. B. Cowern | Zendy; Andrew J. Smith | Zendy; B.J. Sealy | Zendy; W. Lerch | Zendy; S. Paul | Zendy; F. Cristiano | Zendy

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Fluorine-vacancy complexes in ultrashallow B-implanted Si

Author(s) -

D. A. Abdulmalik,

P. G. Coleman,

N. E. B. Cowern,

Andrew J. Smith,

B.J. Sealy,

W. Lerch,

S. Paul,

F. Cristiano

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2335594

Subject(s) - boron , vacancy defect , ion implantation , isothermal process , fluorine , ion , positron annihilation spectroscopy , deep level transient spectroscopy , wafer , materials science , secondary ion mass spectrometry , analytical chemistry (journal) , spectroscopy , mass spectrometry , silicon , radiochemistry , chemistry , positron , crystallography , positron annihilation , nanotechnology , optoelectronics , metallurgy , thermodynamics , physics , nuclear physics , organic chemistry , chromatography , quantum mechanics , electron

Shallow fluorine-vacancy (FV) complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced diffusion of ultrashallow boron, were observed in preamorphized Si wafers implanted with 0.5keV B and 10keV F ions at a dose of 1015cm−2, and then annealed isothermally at 800°C for times ranging from 1to2700s. The results are in agreement with a model which predicts that the complexes are of the form F3nVn, with n most probably being 1 and/or 2.

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