Open AccessPrestrained effect on the emission properties of InGaN∕GaN quantum-well structures
Author(s) -
ChiFeng Huang,
Tsung-Yi Tang,
Jeng-Jie Huang,
Wen-Yu Shiao,
C. C. Yang,
ChihWei Hsu,
LiChyong Chen
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2335384
Subject(s) - cathodoluminescence , quantum well , indium , electroluminescence , optoelectronics , materials science , heterojunction , chemical vapor deposition , photoluminescence , light emitting diode , luminescence , layer (electronics) , optics , physics , nanotechnology , laser
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