Electrospun hybrid organic/inorganic semiconductor Schottky nanodiode | Zendy

Nicholas J. Pinto | Zendy; Rosana González | Zendy; A. T. Charlie Johnson | Zendy; Alan G. MacDiarmid | Zendy

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Electrospun hybrid organic/inorganic semiconductor Schottky nanodiode

Author(s) -

Nicholas J. Pinto,

Rosana González,

A. T. Charlie Johnson,

Alan G. MacDiarmid

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2227758

Subject(s) - schottky diode , thermionic emission , materials science , optoelectronics , semiconductor , schottky barrier , metal–semiconductor junction , fabrication , doping , organic semiconductor , nanotechnology , rectifier (neural networks) , diode , polyaniline , semiconductor device , polymer , composite material , electron , alternative medicine , stochastic neural network , pathology , recurrent neural network , computer science , layer (electronics) , quantum mechanics , machine learning , artificial neural network , polymerization , medicine , physics

We report on a simple method to fabricate, under ambient conditions and within seconds, Schottky nanodiodes using electrospun polyaniline nanofibers and an inorganic n-doped semiconductor. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying nanojunction to the surrounding environment, making them attractive candidates in the potential fabrication of low power, supersensitive, and rapid response sensors as well. The diode parameters were calculated assuming the standard thermionic emission model of a Schottky junction, and the use of this junction as a gas sensor was examined.

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