Open AccessHigh temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide
Author(s) -
Germanas Peleckis,
Xiaolin Wang,
Shi Xue Dou
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2220529
Subject(s) - ferromagnetism , doping , materials science , indium , electrical resistivity and conductivity , tin , indium tin oxide , oxide , atmospheric temperature range , condensed matter physics , metal , nickel , analytical chemistry (journal) , variable range hopping , thermal conduction , metallurgy , nanotechnology , thin film , chemistry , optoelectronics , composite material , physics , thermodynamics , chromatography , quantum mechanics
Observation of high temperature ferromagnetism in Ni-doped In2O3 and indium-tin-oxide (ITO) samples prepared by a solid state synthesis route is reported. Both Ni-doped compounds showed a clear ferromagnetism above 300K with the magnetic moments of 0.03–0.06μB∕Ni and 0.1μB∕Ni at 300 and 10K, respectively. Ni-doped In2O3 samples showed a typical semiconducting behavior with a room temperature resistivity of ρ∼2Ωcm, while Ni-doped ITO samples were metallic with ρ∼2×10−2Ωcm. Analysis of different conduction mechanisms suggested that variable range hopping model explains our ρ-T data for the Ni-doped In2O3 sample the best.
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