Inverted spin polarization of Heusler alloys for spintronic devices | Zendy

Andy Thomas | Zendy; Dirk Meyners | Zendy; Daniel Ebke | Zendy; Ningning Liu | Zendy; M. D. Sacher | Zendy; J. Schmalhorst | Zendy; Günter Reiss | Zendy; H. Ebert | Zendy; Andreas Hütten | Zendy

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Inverted spin polarization of Heusler alloys for spintronic devices

Author(s) -

Andy Thomas,

Dirk Meyners,

Daniel Ebke,

Ningning Liu,

M. D. Sacher,

J. Schmalhorst,

Günter Reiss,

H. Ebert,

Andreas Hütten

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2219333

Subject(s) - spintronics , condensed matter physics , materials science , tunnel magnetoresistance , magnetoresistance , quantum tunnelling , spin polarization , ferromagnetism , optoelectronics , spin valve , magnetic field , physics , electron , quantum mechanics

A new magnetic logic overcomes the major limitations of field programmablegate arrays while having a 50% smaller unit cell than conventional designsutilizing magnetic tunnel junctions with one Heusler alloy electrode. Theseshow positive and negative TMR values at different bias voltages at roomtemperature which generally adds an additional degree of freedom to allspintronic devices

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