Phase transformations induced by spherical indentation in ion-implanted amorphous silicon | Zendy

Bianca Haberl | Zendy; J. E. Bradby | Zendy; S. Ruffell | Zendy; J. S. Williams | Zendy; Paul Munroe | Zendy

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Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

Author(s) -

Bianca Haberl,

J. E. Bradby,

S. Ruffell,

J. S. Williams,

Paul Munroe

Publication year - 2006

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2210767

Subject(s) - materials science , indentation , amorphous solid , silicon , transmission electron microscopy , ion implantation , composite material , electrical resistivity and conductivity , deformation (meteorology) , penetration depth , amorphous silicon , ion , phase (matter) , annealing (glass) , crystalline silicon , crystallography , nanotechnology , optics , metallurgy , chemistry , physics , organic chemistry , engineering , electrical engineering

The deformation behavior of ion-implanted (unrelaxed) and annealed ion-implanted (relaxed) amorphous silicon (a-Si) under spherical indentation at room temperature has been investigated. It has been found that the mode of deformation depends critically on both the preparation of the amorphous film and the scale of the mechanical deformation. Ex situ measurements, such as Raman microspectroscopy and cross-sectional transmission electron microscopy, as well as in situ electrical measurements reveal the occurrence of phase transformations in all relaxed a-Si films. The preferred deformation mode of unrelaxed a-Si is plastic flow, only under certain high load conditions can this state of a-Si be forced to transform. In situ electrical measurements have revealed more detail of the transformation process during both loading and unloading. We have used ELASTICA simulations to obtain estimates of the depth of the metallic phase as a function of load, and good agreement is found with the experiment. On unloading, ...

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