Interface creation and stress dynamics in plasma-deposited silicon dioxide films | Zendy

Vicky Au | Zendy; Christine Charles | Zendy; R. W. Boswell | Zendy

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Interface creation and stress dynamics in plasma-deposited silicon dioxide films

Author(s) -

Vicky Au,

Christine Charles,

R. W. Boswell

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2210085

Subject(s) - silicon , materials science , silicon dioxide , coalescence (physics) , deposition (geology) , thin film , amorphous solid , stress (linguistics) , plasma , pulsed laser deposition , composite material , nanotechnology , crystallography , metallurgy , chemistry , geology , astrobiology , physics , philosophy , quantum mechanics , sediment , paleontology , linguistics

The stress in amorphous silicon dioxide film grown by plasma-assisted deposition was investigated both during and after film growth for continuously and intermittently deposited films. It is shown that an intermittent deposition leads to the creation of interfacial regions during film growth, but also causes dynamical structural change in already-deposited film which results in a significantly different stress-thickness profile measured after deposition. Film growth in the continuously deposited film was also monitored using an in situ laser reflection technique, and a strong change in stress was detected at about 145nm which was attributed to the onset of island coalescence.

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