Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness | Zendy

Tsuyoshi Yamamoto | Zendy; Yasunobu Nakamura | Zendy; Yu. A. Pashkin | Zendy; O. Astafiev | Zendy; Jaw-Shen Tsai | Zendy

Open Access

Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness

Author(s) -

Tsuyoshi Yamamoto,

Yasunobu Nakamura,

Yu. A. Pashkin,

O. Astafiev,

Jaw-Shen Tsai

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2207555

Subject(s) - quasiparticle , coulomb blockade , condensed matter physics , superconductivity , aluminium , materials science , electron , transistor , optoelectronics , band gap , energy (signal processing) , coulomb , physics , voltage , quantum mechanics , metallurgy

We propose a novel method for suppression of quasiparticle poisoning in AlCoulomb blockade devices. The method is based on creation of a proper energygap profile along the device. In contrast to the previously used techniques,the energy gap is controlled by the film thickness. Our transport measurementsconfirm that the quasiparticle poisoning is suppressed and clear 2$e$periodicity is observed only when the island is made much thinner than theleads. This result is consistent with the existing model and provides a simplemethod to suppress quasiparticle poisoning

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