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We propose a novel method for suppression of quasiparticle poisoning in AlCoulomb blockade devices. The method is based on creation of a proper energygap profile along the device. In contrast to the previously used techniques,the energy gap is controlled by the film thickness. Our transport measurementsconfirm that the quasiparticle poisoning is suppressed and clear 2$e$periodicity is observed only when the island is made much thinner than theleads. This result is consistent with the existing model and provides a simplemethod to suppress quasiparticle poisoning

Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness