p -type electrical conduction in α-AgGaO2 delafossite thin films | Zendy

K.A. Vanaja | Zendy; R. S. Ajimsha | Zendy; A.S. Asha | Zendy; M. K. Jayaraj | Zendy

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p -type electrical conduction in α-AgGaO2 delafossite thin films

Author(s) -

K.A. Vanaja,

R. S. Ajimsha,

A.S. Asha,

M. K. Jayaraj

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2204757

Subject(s) - delafossite , materials science , thin film , pulsed laser deposition , band gap , seebeck coefficient , electrical resistivity and conductivity , heterojunction , optoelectronics , substrate (aquarium) , thermal conduction , thermoelectric effect , direct and indirect band gaps , analytical chemistry (journal) , nanotechnology , thermal conductivity , oxide , composite material , chemistry , metallurgy , oceanography , engineering , chromatography , geology , electrical engineering , physics , thermodynamics

Thin films of delafossites of α-AgGaO2 were prepared on α-Al2O3 (0001) and on Si (100) single crystal substrates by pulsed laser deposition. The films have a band gap of 4.12eV and a transparency of more than 50% in the visible region. The electrical conductivity at 300K was 3.2×10−4Scm−1. The positive sign of Seebeck coefficient (+70μVK−1) demonstrated the p-type conduction in the films. Transparent p-n heterojunctions on a glass substrate having a structure glass/ITO∕n-ZnO∕p-AgGaO2 were fabricated. The ratio of forward to reverse current was more than 100 in the range of −2to+2V.

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