Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces | Zendy

Hongbin Yu | Zendy; Lauren J. Webb | Zendy; James R. Heath | Zendy; Nathan S. Lewis | Zendy

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Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

Author(s) -

Hongbin Yu,

Lauren J. Webb,

James R. Heath,

Nathan S. Lewis

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2203968

Subject(s) - scanning tunneling microscope , scanning tunneling spectroscopy , band bending , band gap , fermi level , spectroscopy , materials science , quantum tunnelling , silicon , surface states , electrochemical scanning tunneling microscope , condensed matter physics , chemistry , analytical chemistry (journal) , nanotechnology , optoelectronics , surface (topology) , physics , quantum mechanics , geometry , mathematics , chromatography , electron

Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS). The STS data showed remarkably low levels of midgap states on the CH3- and C2H5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

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