Open AccessRegistration of single quantum dots using cryogenic laser photolithography
Author(s) -
Kwan H. Lee,
Alex M. Green,
Robert A. Taylor,
David N. Sharp,
Jan Scrimgeour,
Olivia Roche,
Jong H. Na,
Anas F. Jarjour,
Andrew J. Turberfield,
Frederic S. F. Brossard,
D. R. Williams,
G. A. D. Briggs
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2202193
Subject(s) - photolithography , quantum dot , fabrication , optoelectronics , materials science , laser , photoluminescence , quantum dot laser , etching (microfabrication) , reactive ion etching , gallium arsenide , quantum optics , nanotechnology , optics , semiconductor laser theory , physics , semiconductor , medicine , alternative medicine , pathology , layer (electronics)
We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum information processing. The quantum dot positions were registered with an estimated accuracy of 50 nm by fabricating metal alignment markers around them. Photoluminescence spectra from quantum dots before and after marker fabrication were identical except for a small redshift (~1 nm), probably introduced during the reactive ion etching.
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