Open AccessSi ∕ Si Ge -based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance
Author(s) -
Junting Shi,
PeiChin Chiu,
F.-H. Huang,
Y.-S. Wu,
Ja-Yu Lu,
ChiKuang Sun,
C. W. Liu,
P. S. Chen
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2202101
Subject(s) - responsivity , optoelectronics , materials science , photodiode , doping , superlattice , avalanche photodiode , quantum efficiency , photodetector , optics , detector , physics
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