Open AccessElectric-field-induced charge noise in doped silicon: Ionization of phosphorus donors
Author(s) -
A. J. Ferguson,
V. Chan,
A. R. Hamilton,
Robert G. Clark
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2198013
Subject(s) - doping , silicon , electric field , noise (video) , optoelectronics , substrate (aquarium) , electron , materials science , impact ionization , atomic physics , quantum tunnelling , ionization , charge (physics) , condensed matter physics , chemistry , physics , ion , oceanography , organic chemistry , quantum mechanics , artificial intelligence , computer science , image (mathematics) , geology
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