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Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire
Author(s) -
Hui Yang,
Shijie Xu,
Qinghong Li,
Jie Zhang
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2197310
Subject(s) - femtosecond , sapphire , materials science , photoluminescence , optoelectronics , second harmonic generation , luminescence , laser , excitation , wide bandgap semiconductor , polarization (electrochemistry) , nonlinear optics , optics , chemistry , physics , quantum mechanics
At room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the nonlinear response when the SHG is tuned to coincide with the near-band-edge emission, we carefully measured dependence of the SHG and NPL signals on polarization of the excitation light. The results reveal that the reabsorption of the SHG photons with energies higher than the fundamental gap of GaN significantly contributes to generation of the efficient NPL signal. © 2006 American Institute of Physics.link_to_subscribed_fulltex

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