High-mobility electronic transport in ZnO thin films | Zendy

Atsushi Tsukazaki | Zendy; Akira Ohtomo | Zendy; M. Kawasaki | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

High-mobility electronic transport in ZnO thin films

Author(s) -

Atsushi Tsukazaki,

Akira Ohtomo,

M. Kawasaki

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2193727

Subject(s) - molecular beam epitaxy , thin film , materials science , electron mobility , hall effect , epitaxy , oxygen , oxygen pressure , wide bandgap semiconductor , pulsed laser deposition , optoelectronics , analytical chemistry (journal) , electrical resistivity and conductivity , chemistry , nanotechnology , layer (electronics) , engineering , organic chemistry , chromatography , electrical engineering

A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000cm2V−1s−1 at 100K and 440cm2V−1s−1 at 300K were recorded with the residual electron densities of 4×1014 and 9×1015cm−3, respectively.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research