Influence of trap states on dynamic properties of single grain silicon thin film transistors | Zendy

Feng Yan | Zendy; P. Migliorato | Zendy; Ryoichi Ishihara | Zendy

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Influence of trap states on dynamic properties of single grain silicon thin film transistors

Author(s) -

Feng Yan,

P. Migliorato,

Ryoichi Ishihara

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2193049

Subject(s) - thin film transistor , overshoot (microwave communication) , trap (plumbing) , materials science , transistor , transient (computer programming) , optoelectronics , grain boundary , silicon , electrical engineering , nanotechnology , physics , composite material , voltage , computer science , layer (electronics) , meteorology , engineering , microstructure , operating system

The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.Microelectronics & Computer EngineeringElectrical Engineering, Mathematics and Computer Scienc

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