English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The variation of electron barrier height and built-in voltage of Pt Schottky diodes on the mechanically strained n-type Si and Ge is investigated experimentally and theoretically. The mechanical strain is measured by Raman spectroscopy and analyzed by the finite element method. The built-in voltage and barrier height measured by capacitance-voltage and current-voltage methods, respectively, decrease with increasing external tensile strain. The reduction of the built-in voltage and barrier height originates mainly from the conduction band lowering with strain. The extracted value of conduction band lowering is consistent with the theoretical calculations using the "stress-free" boundary condition. (c) 2006 American Institute of Physics

Strained Pt Schottky diodes on n-type Si and Ge