Strained Pt Schottky diodes on n-type Si and Ge | Zendy

M.-H. Liao | Zendy; P.-S. Kuo | Zendy; S.-R. Jan | Zendy; S. T. Chang | Zendy; C. W. Liu | Zendy

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Strained Pt Schottky diodes on n-type Si and Ge

Author(s) -

M.-H. Liao,

P.-S. Kuo,

S.-R. Jan,

S. T. Chang,

C. W. Liu

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2191831

Subject(s) - materials science , schottky barrier , diode , schottky diode , raman spectroscopy , wide bandgap semiconductor , stress (linguistics) , optoelectronics , thermal conduction , voltage , condensed matter physics , germanium , capacitance , silicon , chemistry , electrical engineering , optics , composite material , physics , linguistics , philosophy , electrode , engineering

The variation of electron barrier height and built-in voltage of Pt Schottky diodes on the mechanically strained n-type Si and Ge is investigated experimentally and theoretically. The mechanical strain is measured by Raman spectroscopy and analyzed by the finite element method. The built-in voltage and barrier height measured by capacitance-voltage and current-voltage methods, respectively, decrease with increasing external tensile strain. The reduction of the built-in voltage and barrier height originates mainly from the conduction band lowering with strain. The extracted value of conduction band lowering is consistent with the theoretical calculations using the "stress-free" boundary condition. (c) 2006 American Institute of Physics

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