Defects in silicon nanowires | Zendy

Rongping Wang | Zendy

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Defects in silicon nanowires

Author(s) -

Rongping Wang

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2191830

Subject(s) - dangling bond , silicon , electron paramagnetic resonance , nanowire , saturation (graph theory) , resonance (particle physics) , materials science , silicon nanowires , amorphous solid , center (category theory) , condensed matter physics , amorphous silicon , atomic physics , nanotechnology , nuclear magnetic resonance , crystallography , physics , chemistry , optoelectronics , crystalline silicon , mathematics , combinatorics

Defects in silicon nanowires have been investigated using the electron spin resonance (ESR) method. The ESR signals consist of three features: a strong resonance at g=2.00249, a weak line at g=2.00048, and a broad feature at g=2.00541. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and the weak line to the well-assigned E′ center. We argue that the assignment of the broad feature to Pb centers [A. Baumer et al., Appl. Phys. Lett. 85, 943 (2004)] is oversimplified, and its physical origins may include dangling bonds in amorphous silicon.

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