Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure | Zendy

Masahito Tagawa | Zendy; Chie Sogo | Zendy; Kumiko Yokota | Zendy; Akitaka Yoshigoe | Zendy; Yuden Teraoka | Zendy; Takayoshi Shimura | Zendy

Open Access

Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure

Author(s) -

Masahito Tagawa,

Chie Sogo,

Kumiko Yokota,

Akitaka Yoshigoe,

Yuden Teraoka,

Takayoshi Shimura

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2190467

Subject(s) - suboxide , overlayer , x ray photoelectron spectroscopy , atom (system on chip) , scattering , silicon , materials science , oxide , analytical chemistry (journal) , chemistry , atomic physics , nuclear magnetic resonance , optics , physics , chromatography , computer science , metallurgy , embedded system

Synchrotron radiation photoelectron spectroscopy (SR-PES) and crystal truncation rod (CTR) scattering profiles were used to investigate an ultrathin SiO2 overlayer on a Si(001) surface formed by a 5eV O-atom beam at room temperature. The SR-PES spectra indicated that the suboxides in the O-atom-beam oxidized film were concentrated on the SiO2 surface rather than at the Si∕SiO2 interface. The CTR scattering data of the O-atom-beam oxidation film had a lower intensity near (11L) (0.3

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