English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Synchrotron radiation photoelectron spectroscopy (SR-PES) and crystal truncation rod (CTR) scattering profiles were used to investigate an ultrathin SiO2 overlayer on a Si(001) surface formed by a 5eV O-atom beam at room temperature. The SR-PES spectra indicated that the suboxides in the O-atom-beam oxidized film were concentrated on the SiO2 surface rather than at the Si∕SiO2 interface. The CTR scattering data of the O-atom-beam oxidation film had a lower intensity near (11L) (0.3<L<0.8), suggesting a lower content of the SiO2 ordered structure in the oxide film. An inverse diffusion of the interstitial Si atoms in the oxidation kinetics can explain the data.

Oxidation of Si(001) with a hyperthermal O-atom beam at room temperature: Suboxide distribution and residual order structure