Dual input AND gate fabricated from a single channel poly(3-hexylthiophene) thin film field effect transistor

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin film transistor having a split gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or −10V to each of the gate electrodes. When −10V was simultaneously applied to both gates, the device was conductive (on), while any other combination of gate voltages rendered the device resistive (off). The p-type carrier charge mobility was about 5×10−4cm2∕Vs. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate nonplanarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.