Effects of depletion on the emission from individual InGaN dots | Zendy

B. Sherliker | Zendy; Matthew P. Halsall | Zendy; P. D. Buckle | Zendy; P. J. Parbrook | Zendy; T. Wang | Zendy

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Effects of depletion on the emission from individual InGaN dots

Author(s) -

B. Sherliker,

Matthew P. Halsall,

P. D. Buckle,

P. J. Parbrook,

T. Wang

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2186973

Subject(s) - quantum dot , optoelectronics , ohmic contact , photoluminescence , materials science , schottky diode , biasing , wide bandgap semiconductor , capacitance , schottky barrier , condensed matter physics , voltage , nanotechnology , chemistry , diode , physics , electrode , layer (electronics) , quantum mechanics

We report a photoluminescence (PL) study of the effects of carrier depletion on the electronic states of InGaN quantum dots. Samples were fabricated into mesa devices with top Schottky contacts and back ohmic contacts. Submicrometer apertures were created lithographically. Capacitance-voltage measurements of the devices suggest that the dots are fully depleted when they are unbiased. Micro-PL studies of individual dots show narrow linewidths under zero or reverse bias conditions. Forward biasing of the junction results in broadening of the dot levels due to the populating of nearby conduction band states in the underlying quantum well.

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