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Admittance of CdS nanowires embedded in porous alumina template
Author(s) -
A. Varfolomeev,
D.F. Zaretsky,
V. I. Pokalyakin,
S. A. Tereshin,
Sandipan Pramanik,
S. Bandyopadhyay
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2185729
Subject(s) - nanowire , conductance , materials science , mean free path , admittance , condensed matter physics , capacitance , porosity , phonon , bistability , electron , nanotechnology , optoelectronics , composite material , physics , electrical impedance , quantum mechanics , electrode
CdS nanowires of 10nm diameter, electrodeposited in porous alumina films, had shown a conductance bistability in the past [Appl. Phys. Lett. 76, 460 (2000)]. The conductance has a high (ON) and a low (OFF) state. In the ON state, different sets of nanowires display qualitatively different relation between the conductance and capacitance. We propose a model to explain this anomalous behavior. Based on this model, we predict that the inelastic mean free path of electrons in the nanowires is 3–3.5nm at room temperature. This short mean free path may be a consequence of acoustic phonon confinement.

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