Open AccessMultiband GaNAsP quaternary alloys
Author(s) -
K. M. Yu,
W. Walukiewicz,
Joel W. Ager,
D. P. Bour,
Rouin Farshchi,
O. D. Dubón,
S. X. Li,
Ian D. Sharp,
E. E. Häller
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2181627
Subject(s) - materials science , conduction band , annealing (glass) , semiconductor , alloy , semimetal , ion , thermal conduction , condensed matter physics , optoelectronics , nitrogen , analytical chemistry (journal) , band gap , metallurgy , chemistry , electron , physics , organic chemistry , chromatography , quantum mechanics , composite material
We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.
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