Open AccessStructure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
Author(s) -
Makoto Shiojiri,
ChangCheng Chuo,
J. T. Hsu,
JerRen Yang,
H. Saijo
Publication year - 2006
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2180532
Subject(s) - quantum well , materials science , transmission electron microscopy , dark field microscopy , nucleation , condensed matter physics , optoelectronics , crystallography , scanning transmission electron microscopy , wide bandgap semiconductor , microscopy , optics , nanotechnology , chemistry , physics , organic chemistry , laser
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom