Vacancy-engineering implants for high boron activation in silicon on insulator | Zendy

Andrew J. Smith | Zendy; N. E. B. Cowern | Zendy; R. Gwilliam | Zendy; B.J. Sealy | Zendy; B. Colombeau | Zendy; E. J. H. Collart | Zendy; S. Gennaro | Zendy; D. Giubertoni | Zendy; M. Bersani | Zendy; Mario Barozzi | Zendy

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Vacancy-engineering implants for high boron activation in silicon on insulator

Author(s) -

Andrew J. Smith,

N. E. B. Cowern,

R. Gwilliam,

B.J. Sealy,

B. Colombeau,

E. J. H. Collart,

S. Gennaro,

D. Giubertoni,

M. Bersani,

Mario Barozzi

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2178487

Subject(s) - silicon , materials science , boron , silicon on insulator , fabrication , vacancy defect , doping , optoelectronics , epitaxy , insulator (electricity) , ion implantation , nanotechnology , crystallography , chemistry , ion , organic chemistry , medicine , alternative medicine , pathology , layer (electronics)

The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional preamorphization and solid-phase epitaxial regrowth. An optimized 160keV silicon implant in a 55∕145nm silicon-on-insulator structure enables stable activation of a 500eV boron implant to a concentration ∼5×1020cm−3.

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