Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films | Zendy

ChunWei Chen | Zendy; Cheng-Chia Huang | Zendy; Yun-Yue Lin | Zendy; WeiFang Su | Zendy; LiChyong Chen | Zendy; KueiHsien Chen | Zendy

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Photoconductivity and highly selective ultraviolet sensing features of amorphous silicon carbon nitride thin films

Author(s) -

ChunWei Chen,

Cheng-Chia Huang,

Yun-Yue Lin,

WeiFang Su,

LiChyong Chen,

KueiHsien Chen

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2178406

Subject(s) - photoconductivity , materials science , optoelectronics , thin film , photodetector , silicon , ultraviolet , amorphous silicon , amorphous solid , silicon nitride , graphitic carbon nitride , quantum efficiency , carbon fibers , nitride , amorphous carbon , crystalline silicon , nanotechnology , chemistry , photocatalysis , composite material , layer (electronics) , biochemistry , organic chemistry , composite number , catalysis

Photoconductivity of amorphous silicon carbon nitride (a-SiCN) as a function of incident photon energies has been studied. A metal-semiconductor-metal photodetector device based on the a-SiCN thin film demonstrates excellent selective ultraviolet sensing features. A large photo-to-dark current ratio about 5000 and a relative quantum efficiency about ∼105 under illumination of the 250nm light source and a bias voltage of 5V were observed. A model based on the heterogeneous structure in the a-SiCN thin film which consists of π−π* bands and σ−σ* bands was introduced to account for the observed photoconductive transport properties.

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