Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence | Zendy

Norikazu Mizuochi | Zendy; Hideyuki Watanabe | Zendy; Hideyo Okushi | Zendy; Satoshi Yamasaki | Zendy; J. Niitsuma | Zendy; Takashi Sekiguchi | Zendy

Open Access

Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence

Author(s) -

Norikazu Mizuochi,

Hideyuki Watanabe,

Hideyo Okushi,

Satoshi Yamasaki,

J. Niitsuma,

Takashi Sekiguchi

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2176860

Subject(s) - cathodoluminescence , chemical vapor deposition , electron paramagnetic resonance , exciton , diamond , hydrogen , vacancy defect , materials science , paramagnetism , analytical chemistry (journal) , chemistry , molecular physics , atomic physics , condensed matter physics , nuclear magnetic resonance , luminescence , crystallography , nanotechnology , optoelectronics , composite material , physics , organic chemistry , chromatography

Hydrogen-vacancy related defect (H1′) in chemical vapor deposition homoepitaxial diamond films has been investigated by electron paramagnetic resonance and cathodoluminescence. It is found that the concentration of H1′ significantly decreases as the dilution (CH4/H2) ratio decreases. It is also confirmed that the intensity of free-exciton emission (Iex) increases as the CH4/H2 ratio decreases. The complementary relationship between Iex and H1′ can be explained by considering that H1′ acts as a nonradiative recombination center which reduces the lifetime of free exciton and Iex. The suppression mechanism of H1′ is discussed by considering the balance between the growth rate and the annihilation rate of H1′ in the subsurface region

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