Dopant source choice for formation of p-type ZnO: Li acceptor | Zendy

Y. J. Zeng | Zendy; Z. Z. Ye | Zendy; Wan Xu | Zendy; Dongyang Li | Zendy; Jianguo Lü | Zendy; Li Zhu | Zendy; Binghui Zhao | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Dopant source choice for formation of p-type ZnO: Li acceptor

Author(s) -

Y. J. Zeng,

Z. Z. Ye,

Wan Xu,

Dongyang Li,

Jianguo Lü,

Li Zhu,

Binghui Zhao

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2172743

Subject(s) - homojunction , materials science , dopant , doping , thin film , substrate (aquarium) , hall effect , sputter deposition , acceptor , optoelectronics , layer (electronics) , analytical chemistry (journal) , electrical resistivity and conductivity , sputtering , wide bandgap semiconductor , nanotechnology , chemistry , condensed matter physics , electrical engineering , physics , oceanography , engineering , chromatography , geology

Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Omega cm, Hall mobility of 2.65 cm(2)/V s, and hole concentration of 1.44x10(17) cm(-3) was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer. (c) 2006 American Institute of Physics.status: publishe

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research