Open AccessShape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices
Author(s) -
Wen Lei,
Y. H. Chen,
Peng Jin,
X. L. Ye,
Yun-biao Wang,
Bin Xu,
Z. G. Wang
Publication year - 2006
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2172288
Subject(s) - superlattice , materials science , nanostructure , overpressure , quantum dot , molecular beam epitaxy , alloy , phase (matter) , optoelectronics , condensed matter physics , layer (electronics) , epitaxy , nanotechnology , composite material , chemistry , physics , organic chemistry , thermodynamics
The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1× 10-5 Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5× 10-6 or 2.5× 10-6 Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness. © 2006 American Institute of Physics.
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