Open AccessOxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
Author(s) -
H. Coffin,
C. Bonafos,
Sylvie SchammChardon,
N. Cherkashin,
G. Ben Assayag,
A. Claverie,
Marc Respaud,
Panagiotis Dimitrakis,
P. Normand
Publication year - 2006
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2171785
Subject(s) - materials science , silicon , nanocrystal , ion implantation , thermal oxidation , transmission electron microscopy , scanning electron microscope , oxide , thin film , ion , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , composite material , organic chemistry , chromatography , metallurgy
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