InSb ∕ AlInSb quantum-well light-emitting diodes | Zendy

G. R. Nash | Zendy; Mary K. Haigh | Zendy; Harvey R. Hardaway | Zendy; L. Buckle | Zendy; A. D. Andreev | Zendy; Neil T. Gordon | Zendy; Stuart Smith | Zendy; M. T. Emeny | Zendy; T. Ashley | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

InSb ∕ AlInSb quantum-well light-emitting diodes

Author(s) -

G. R. Nash,

Mary K. Haigh,

Harvey R. Hardaway,

L. Buckle,

A. D. Andreev,

Neil T. Gordon,

Stuart Smith,

M. T. Emeny,

T. Ashley

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2171647

Subject(s) - electroluminescence , quantum well , diode , optoelectronics , light emitting diode , materials science , quantum , recombination , band gap , semiconductor , wide bandgap semiconductor , quantum efficiency , spontaneous emission , condensed matter physics , physics , chemistry , optics , nanotechnology , quantum mechanics , laser , biochemistry , layer (electronics) , gene

We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research